The Electrical Characterization of Semiconductors: Majority Carriers and Electron States
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The charging and discharging bias regions of the QDs are determined for different temperatures. DLTS signal analysis yields an equivalent to the ensemble density of states for the individual energies as well as the density function of the confinement energies of the QDs in the ensemble. In particular for charge storage applications, they are a promising option due to not only the very large barriers that can be achieved [2—5] but also the spatial separation of electrons and holes which facilitates long exciton lifetimes [6, 7] and could lead to interesting long-wavelength optoelectronic applications .
Although growth by metal organic vapor phase epitaxy MOCVD has been demonstrated [9, 10], the common way to fabricate these dots is molecular beam epitaxy MBE due to the peculiarities of Sb i.
- The electrical characterization of semiconductors : majority carriers and electron states /.
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We analyze static as well as time-resolved capacitance-voltage C-V measurements, in particular deep-level transient measurements DLTS , in order to determine the key electronic properties, such as the activation energies, the localization energy, and the apparent capture cross sections of the QD ensemble. By concentrating on the physical principles of each technique and enumerating its inherent limitations, the authors have produced a text which should be helpful in solving a variety of problems in semiconductor characterization and one which will not be overtaken quickly by development in the materials themselves.
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Theory of Electrical Characterization of Semiconductors
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Electron Devices 13 10 , CrossRef. Witczak, J.